Surface electronic properties of ion-implanted laser-annealed Si(111)
- Author(s):
Eastman, D.E. ( IBM T.J. Watson Research Center ) Heimann, P. ( IBM T.J. Watson Research Center ) Himpsel, F.J. ( IBM T.J. Watson Research Center ) Reihl, B. ( IBM T.J. Watson Research Center ) Zehner, D.M. ( Oak Ridge National Laboratory ) White, C.W. ( Oak Ridge National Laboratory ) - Publication title:
- Laser and electron-beam interactions with solids : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposia proceedings
- Ser. no.:
- 4
- Pub. Year:
- 1982
- Page(from):
- 261
- Page(to):
- 266
- Pub. info.:
- New York: North Holland
- ISSN:
- 02729172
- ISBN:
- 9780444006936 [0444006931]
- Language:
- English
- Call no.:
- M23500/4
- Type:
- Conference Proceedings
Similar Items:
North Holland |
Materials Research Society |
North Holland |
North Holland |
3
Conference Proceedings
A LEED investigation of (111) oriented Si, Ge and GaAs surfaces following pulsed laser irradiation
North Holland |
North-Holland |
North-Holland |
Trans Tech Publications |
5
Conference Proceedings
Kinetic effects and mechanisms limiting substitutional solubility in the formation of supersaturated alloys by pulsed laser annealing
North Holland |
11
Conference Proceedings
Pattern Formation via a Two-Step Faceting Transition on Vicinal Si(111) Surfaces
Materials Research Society |
Materials Research Society |
12
Conference Proceedings
Synthesis and physical properties of semiconductor nanocrystals formed by ion implantation
American Chemical Society |