Calculation of carrier and lattice temperatures induced in Si and GaAs by picosecond laser pulses

Calculation of carrier and lattice temperatures induced in Si and GaAs by picosecond laser pulses

Author(s):

Lietoila, A. ( Stanford Electronics Laboratories )
Gibbons, J.F. ( Stanford Electronics Laboratories )

Publication title:

Laser and electron-beam interactions with solids : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposia proceedings

Ser. no.:

4

Pub. Year:

1982

Page(from):

163

Page(to):

168

Pub. info.:

New York: North Holland

ISSN:

02729172

ISBN:

9780444006936 [0444006931]

Language:

English

Call no.:

M23500/4

Type:

Conference Proceedings

Details

TDL ID:	ZA00018762
Series ID:	PA00000010
Conf. info. (Name):	Materials Research Society Annual Meeting
Conf. info. (Number):	1981
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1981.11.16-1981.11.19

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