Analysis of Selectively Grown Epitaxial Si1-xGex by Spectroscopic Ellipsometry and Comparison with RBS and SIMS

Analysis of Selectively Grown Epitaxial Si1-xGex by Spectroscopic Ellipsometry and Comparison with RBS and SIMS

Author(s):

Loo,R.

Publication title:

Analytical and diagnostic techniques for semiconductor materials, devices and processes : joint proceedings of the symposia on ALTECH 99, satellite symposium to ESSDERC 99, Leuven, Belgium [and] the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3895

Pub. Year:

1999

Page(from):

170

Page(to):

179

Pub. info.:

Pennington, N.J.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434975 [0819434973]

Language:

English

Call no.:

P63600/3895

Type:

Conference Proceedings

Details

TDL ID:	ZA00018561
Series ID:	PA00000029
Conf. info. (Name):	ALTECH ; ESSDERC ; Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices
Conf. info. (Number):	1999
Conf. info. (Venue):	Leuven, Belgium
Conf. info. (Date):	1999.00.00

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