Hysteresis effect of pH-ISFET based on Beckman ｦｵ 110(Si3N4 gate pH-ISFET)

Hysteresis effect of pH-ISFET based on Beckman ｦｵ 110(Si3N4 gate pH-ISFET)

Author(s):

Chou,J.-C. ( National Yunlin Univ.of Scienceand Technology )
Tseng,Y.-N.

Publication title:

Optoelectronic Materials and Devices II

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4078

Pub. Year:

2000

Page(from):

793

Page(to):

800

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819437174 [0819437174]

Language:

English

Call no.:

P63600/4078

Type:

Conference Proceedings

Details

TDL ID:	ZA00018522
Series ID:	PA00000029
Conf. info. (Name):	Photonics Taiwan : Optoelectroflic Materials and Devices
Conf. info. (Number):	2000 : 2nd
Conf. info. (Venue):	Taipei, Taiwan
Conf. info. (Date):	2000.07.26-2000.07.28

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