STRAIN RELAXATION AND SURFACE ROUGHNESS AS A FUNCTION OF GROWTH TEMPERATURE IN LINEARLY GRADED InxAl1-xAs (x=0.05 to 0.25) BUFFERS

STRAIN RELAXATION AND SURFACE ROUGHNESS AS A FUNCTION OF GROWTH TEMPERATURE IN LINEARLY GRADED InxAl1-xAs (x=0.05 to 0.25) BUFFERS

Author(s):

Olsen, J. A.

Publication title:

Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

326

Pub. Year:

1994

Page(from):

395

Pub. info.:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992252 [1558992251]

Language:

English

Call no.:

M23500/326

Type:

Conference Proceedings

Details

TDL ID:	ZA00018465
Series ID:	PA00000011
Conf. info. (Name):	Symposium on growth, processing, and characterization of semiconductor heterostructures
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.02

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