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CHARACTERIZATION OF GeSi LAYER FORMED BY HIGH DOSE Ge IMPLANTATION INTO Si

Author(s):
Publication title:
Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
316
Pub. Year:
1994
Page(from):
759
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992153 [1558992154]
Language:
English
Call no.:
M23500/316
Type:
Conference Proceedings

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