Epitaxially Grown N+ Phosphorus Collector Peaks in High-Frequency HBTs With Implanted Emitters

Epitaxially Grown N+ Phosphorus Collector Peaks in High-Frequency HBTs With Implanted Emitters

Author(s):

Publication title:

Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

533

Pub. Year:

1998

Page(from):

105

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994393 [1558994394]

Language:

English

Call no.:

M23500/533

Type:

Conference Proceedings

Details

TDL ID:	ZA00018459
Series ID:	PA00000011
Conf. info. (Name):	Symposium on epitaxy and applications of si-based heterostructures
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.17

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