Direct Wafer Bonding and Layer Transfer: An Innovative Way for the Integration of Ferroelectric Oxides Into Silicon Technology

Direct Wafer Bonding and Layer Transfer: An Innovative Way for the Integration of Ferroelectric Oxides Into Silicon Technology

Author(s):

Alexe, M.

Publication title:

Ferroelectric thin films VI : symposium held November 30-December 4, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

493

Pub. Year:

1998

Page(from):

517

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993983 [1558993983]

Language:

English

Call no.:

M23500/493

Type:

Conference Proceedings

Details

TDL ID:	ZA00018455
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ferroelectric thin films
Conf. info. (Number):	6th
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.11.30-1997.12.04

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