The Effects of the Addition of CF4, Cl2, and N2 to O2 ECR Plasma on the Etch Rate, Selectivity, and Etched Profile of RuO2 Film

The Effects of the Addition of CF4, Cl2, and N2 to O2 ECR Plasma on the Etch Rate, Selectivity, and Etched Profile of RuO2 Film

Author(s):

Publication title:

Ferroelectric thin films VI : symposium held November 30-December 4, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

493

Pub. Year:

1998

Page(from):

183

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993983 [1558993983]

Language:

English

Call no.:

M23500/493

Type:

Conference Proceedings

Details

TDL ID:	ZA00018455
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ferroelectric thin films
Conf. info. (Number):	6th
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.11.30-1997.12.04

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