Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality | 東京工業大学附属図書館文献データベース

Blank Cover Image

Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality

Author(s):

Publication title:

Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

483

Pub. Year:

1998

Page(from):

301

Pub. info.:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993884 [1558993886]

Language:

English

Call no.:

M23500/483

Type:

Conference Proceedings

Details

TDL ID:	ZA00018454
Series ID:	PA00000011
Conf. info. (Name):	Symposium on power semiconductor materials and devices
Conf. info. (Number):	1997
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.04

Similar Items:

1 Conference Proceedings Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals Eckstein, R., Hofmann, D., Makarov, Y., Muller, St. G., Pensl, G., Schmitt, E., Winnacker, A. MRS - Materials Research Society	7 Conference Proceedings Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications
2 Conference Proceedings Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer,Mass Transport and Heat of Crystallization and Results on its Experimental … Muller,St.G., Eckstein,R., Hofmann,D., Kadinski,L., Kaufmann,P., Kolbl,M., Schmitt,E. Trans Tech Publications	8 Conference Proceedings Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions Straubinger, T. L., Bickermann, M., Grau, M., Hofmann, D., Kadinski, L., Muller, S. G., Selder, M., Wellmann, P. J., … Trans Tech Publications
3 Conference Proceedings Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals Muller,St.G., Eckstein,R., Hartung,W., Hofmann,D., Kolbl,M., Pensl,G., Schmitt,E., Schmitt,E.J., Weber,A.-D., … Trans Tech Publications	9 Conference Proceedings Experimental and theoretical analysis of the hall-mobility in n-type bulk 6H- and 4H-SiC Muller, St. G., Hofmann, D., Winnacker, A. MRS-Materials Research Society
4 Conference Proceedings Growth and characterization of 2" 6H-silicon carbide Schmitt, E., Eckstein, R., Kolbl, M. MRS-Materials Research Society	10 Conference Proceedings Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation Wellmann, P. J., Bickermann, M., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T. L., Winnacker, A. Trans Tech Publications
5 Conference Proceedings Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions Schmitt, E., Rasp, M., Weber, A.-D., Koelbl, M., Eckstein, R., Kadinski, L., Selder, M. Trans Tech Publications	11 Conference Proceedings Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth Muller,M., Bickermam,M., Hofmann,D., Weber,A.-D., Winnacker,A. Trans Tech Publications
6 Conference Proceedings Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals Hofmann, D., Bickermann, M., Hartung, W., Winnacker, A. Trans Tech Publications	12 Conference Proceedings Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality Epelbaum, B.M., Hofmann, D., Bickermann, M., Winnacker, A. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12