Localized Lifetime Control in silicon Bipolar Power Devices by Voids Induced by He Ion Implantation

Localized Lifetime Control in silicon Bipolar Power Devices by Voids Induced by He Ion Implantation

Author(s):

Publication title:

Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

483

Pub. Year:

1998

Page(from):

45

Pub. info.:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993884 [1558993886]

Language:

English

Call no.:

M23500/483

Type:

Conference Proceedings

Details

TDL ID:	ZA00018454
Series ID:	PA00000011
Conf. info. (Name):	Symposium on power semiconductor materials and devices
Conf. info. (Number):	1997
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.04

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