Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHz Glow Discharge
- Author(s):
- Publication title:
- Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 420
- Pub. Year:
- 1996
- Page(from):
- 99
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993235 [1558993231]
- Language:
- English
- Call no.:
- M23500/420
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Surface Roughness of Silicon-Nitride Gate Insulators Deposited in 40-MHz Glow Discharge
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
4
Conference Proceedings
HYDROGEN DILUTION OF SILANE: CORRELATION BETWEEN THE STRUCTURE AND OPTICAL BAND GAP IN GD a_Si:H FILMS
Materials Research Society |
MRS - Materials Research Society |
5
Conference Proceedings
Defect Properties of Cathode Deposited Glow Discharge Amorphous Silicon Germanium Alloys
MRS - Materials Research Society |
Electrochemical Society |
6
Conference Proceedings
DEGRADATION OF AMORPHOUS SILICON BASED PHOTO-CONDUCTORS BY CORONA DISCHARGE
Materials Research Society |
Electrochemical Society |