Modeling of Aspect Ratio Dependent Etching in an Inductively Coupled Plasma
- Author(s):
- Publication title:
- Modeling and simulation of thin-film processing : symposium held April 17-20, 1995, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 389
- Pub. Year:
- 1995
- Page(from):
- 197
- Pub. info.:
- Pittsburgh: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992924 [1558992928]
- Language:
- English
- Call no.:
- M23500/389
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Modeling of Notching Caused by Aspect Ratio Dependent Charging During High Density Plasma Etching
Electrochemical Society |
7
Conference Proceedings
Defining conditions for the etching of silicon in an inductive coupled plasma reactor
MRS-Materials Research Society |
2
Conference Proceedings
High-Aspect-Ratio Inductively Coupled Plasma Etching of Bulk Titanium for MEMS Applications
Electrochemical Society |
MRS - Materials Research Society |
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
Electrochemical Society |
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |