Ultra-Shallow N+P and P+N Junction Formation Using Low Energy High Dose As+ and BF2+ Implantation and Rapid Thermal Anneal

Ultra-Shallow N+P and P+N Junction Formation Using Low Energy High Dose As+ and BF2+ Implantation and Rapid Thermal Anneal

Author(s):

Publication title:

Semiconductor Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2733

Pub. Year:

1996

Page(from):

487

Page(to):

489

Pub. info.:

Bellingham, WA — New Delhi: SPIE-The International Society for Optical Engineering — Narosa

ISSN:

0277786X

ISBN:

9780819421142 [0819421146]

Language:

English

Call no.:

P63600/2733

Type:

Conference Proceedings

Details

TDL ID:	ZA00018408
Series ID:	PA00000029

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