Evaluation of Crystalline Perfection and Determination of Biaxial Stress in Thin Deposits of Polysilicon and Low Temperature Oxide on Silicon Substrates

Evaluation of Crystalline Perfection and Determination of Biaxial Stress in Thin Deposits of Polysilicon and Low Temperature Oxide on Silicon Substrates

Author(s):

Publication title:

Semiconductor Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2733

Pub. Year:

1996

Page(from):

382

Page(to):

384

Pub. info.:

Bellingham, WA — New Delhi: SPIE-The International Society for Optical Engineering — Narosa

ISSN:

0277786X

ISBN:

9780819421142 [0819421146]

Language:

English

Call no.:

P63600/2733

Type:

Conference Proceedings

Details

TDL ID:	ZA00018408
Series ID:	PA00000029

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