Doped Silicon Epitaxial Layers by MBE
- Author(s):
- Publication title:
- Semiconductor Devices
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 2733
- Pub. Year:
- 1996
- Page(from):
- 344
- Page(to):
- 346
- Pub. info.:
- Bellingham, WA — New Delhi: SPIE-The International Society for Optical Engineering — Narosa
- ISSN:
- 0277786X
- ISBN:
- 9780819421142 [0819421146]
- Language:
- English
- Call no.:
- P63600/2733
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Growth of Submicron Heavily Doped Silicon Layers on Lightly Doped Silicon by RPCVD
SPIE-The International Society for Optical Engineering, Narosa |
SPIE - The International Society for Optical Engineering |
2
Conference Proceedings
Anistropic Trench Etching and Diffusion Studies for the Fabricalion of mm-wave Pin-Diode Array Switches
Narosa Publishing House |
SPIE-The International Society for Optical Engineering, Narosa |
3
Conference Proceedings
Effect of gamma ray and high-energy oxygen ion radiation on electrical and optical properties of MCT epitaxial layers
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
Narosa Publishing House |
10
Conference Proceedings
Growth of Si1-xGex/Si Heterostructures by RPCVD and their Characterization
SPIE - The International Society for Optical Engineering |
5
Conference Proceedings
Bottom Side Alignment Technique for the Fabrication of Microwave Devices with Integral Beam Leads
SPIE - The International Society for Optical Engineering |
11
Conference Proceedings
Planarisation(Damascene)Technique Assisted Processing for the Realisation of P-1-N Diode Array with Integral Membrance
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |