Blank Cover Image

Temperature Modeling of Threshold Voltage of MOS Transistors

Author(s):
Publication title:
Semiconductor Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2733
Pub. Year:
1996
Page(from):
19
Page(to):
29
Pub. info.:
Bellingham, WA — New Delhi: SPIE-The International Society for Optical Engineering — Narosa
ISSN:
0277786X
ISBN:
9780819421142 [0819421146]
Language:
English
Call no.:
P63600/2733
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Temperature and Field Dependence of Electron Mobility in N-Channel MOS Transistors

Yadav,K.S., Tyagi,M.S., Kumar,Jitendra

SPIE-The International Society for Optical Engineering, Narosa
7 Conference Proceedings An accurate model for threshold voltage and S-factor of partially-depleted surrounding gate transistor (PD-SGT)

Yamamoto, V., Hioki, M., Nishi, R., Sakuraba, H., Masuoka, F.

Electrochemical Society
2 Conference Proceedings A Low-field High Temperature Inversion Layer Mobility Model for n-Channel MOSFETs

Tyagi,M.S., Yadav,K.S., Kumar,Jitendra

SPIE - The International Society for Optical Engineering
8 Conference Proceedings Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 oC Temperature Range

Boltovets, M.S., Basanets, V.V., Camara, N., Krivutsa, V.A., Zekentes, K.

Trans Tech Publications
3 Conference Proceedings About the Concept of Threshold in MOS Transistors

Schneider, M. C., Galup-Montoro, C., Maehado, M. B., Cunha, A. I. A.

Electrochemical Society
9 Conference Proceedings REDUCTION OF THRESHOLD VOLTAGE SHIFT BY BIAS ANNEALING OF HYDROGENATED AMORPHOUS SILICON THIN FILM TRANSISTORS

Deane, S.C., Milne, W.I., Powell, M.J.

Materials Research Society
4 Conference Proceedings TWO DIMENSIONAL MOS-TRANSISTOR MODELING

Selberherr S., Schutz A., Potzl H.

Martinus Nijhoff Publishers
10 Conference Proceedings Threshold Voltage Stability in P-Channel MOSFETs with Heavily Boron- Doped SiGeC Gate Layers

Stewart, B., Carroll, M.S., Chang, C.L., Sturm, J.C.

Electrochemical Society
5 Conference Proceedings Review of physical models for MOS transistors

Klaassen M. F.

Noordhoff International Publishing
11 Conference Proceedings Threshold voltage quantum simulations for ultra-thin silicon-on-insulator transistors

Lolivier, J., Deleonibus, S., Balestra, F.

Electrochemical Society
6 Conference Proceedings Fiber-Optic AC Voltage Sensor,

Kim,B.K., Kim,M.S., Kim,B.Y.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Threshold Voltage Optimization with Ion Shower Implantation for Polysilicon Thin-Film Transistors

Choi, B.D., Choi, D.C., Im, C.Y., Choi, K.H., Yu, C.H., Kakkad, R., Chung, H.K.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12