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Effect of p-doping profile on performance of strained multiquantum well InGaAsP/InP lasers

Author(s):
Belenky,G.L. ( AT&T Bell Labs.and SUNY/Stony Brook )
,C.L.Reynolds,Jr.
Kazarinov,R.F.
Swaminathan,V.S.
Luryi,S.
Lopata,J.
1 more
Publication title:
Physics and Simulation of Optoelectronic Devices IV
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2693
Pub. Year:
1996
Page(from):
612
Page(to):
621
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819420671 [0819420670]
Language:
English
Call no.:
P63600/2693
Type:
Conference Proceedings

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