Interface state densities for SiNx:H on cleaved GaAs and InP(110)

Interface state densities for SiNx:H on cleaved GaAs and InP(110)

Author(s):

Landheer, D. ( National Research Council of Canada, Canada )
Hulse, J.E.
Rajesh, K.

Publication title:

Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

573

Pub. Year:

1999

Page(from):

253

Page(to):

258

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558994805 [1558994807]

Language:

English

Call no.:

M23500/573

Type:

Conference Proceedings

Details

TDL ID:	ZA00018349
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor surface passivation and novel device processing
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.07

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