Boron segregation in As-implanted Si due to electric field and transient enhanced diffusion

Boron segregation in As-implanted Si due to electric field and transient enhanced diffusion

Author(s):

Chang,R.D. ( Univ.of Texas at Austin )
Choi,P.S. ( Univ.of Texas at Austin )
Wristers,D. ( Advanced Micro Devices,Inc. )
Chu,P.K. ( City Univ.of Hong Kong )
Kwong,D.L. ( Univ.of Texas at Austin )

Publication title:

Microelectronic Device Technology : 1-2 October 1997, Austin, Texas

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3212

Pub. Year:

1997

Page(from):

296

Page(to):

303

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426444 [081942644X]

Language:

English

Call no.:

P63600/3212

Type:

Conference Proceedings

Details

TDL ID:	ZA00018328
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Microelectronic Device Technology
Conf. info. (Number):	1997
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1997.10.01-1997.10.02

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