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Hot-carrier degradation for deep-submicron N-MOSFETs introduced by back-end processing

Author(s):
Lie,D.Y.C. ( Rockwell Corp. )
Xia,W. ( Rockwell Corp. )
Yota,J. ( Rockwell Corp. )
Joshi,A.B. ( Rockwell Corp. )
Zwingman,R. ( Rockwell Corp. )
Williams,R. ( Rockwell Corp. )
Kerametlian,V. ( Rockwell Corp. )
Cerney,D. ( Rockwell Corp. )
Min,B.W. ( Univ.of Texas at Austin )
Kwong,D.L. ( Univ.of Texas at Austin )
5 more
Publication title:
Microelectronic Device Technology : 1-2 October 1997, Austin, Texas
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3212
Pub. Year:
1997
Page(from):
258
Page(to):
267
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426444 [081942644X]
Language:
English
Call no.:
P63600/3212
Type:
Conference Proceedings

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