Hot-carrier degradation for deep-submicron N-MOSFETs introduced by back-end processing
- Author(s):
Lie,D.Y.C. ( Rockwell Corp. ) Xia,W. ( Rockwell Corp. ) Yota,J. ( Rockwell Corp. ) Joshi,A.B. ( Rockwell Corp. ) Zwingman,R. ( Rockwell Corp. ) Williams,R. ( Rockwell Corp. ) Kerametlian,V. ( Rockwell Corp. ) Cerney,D. ( Rockwell Corp. ) Min,B.W. ( Univ.of Texas at Austin ) Kwong,D.L. ( Univ.of Texas at Austin ) - Publication title:
- Microelectronic Device Technology : 1-2 October 1997, Austin, Texas
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3212
- Pub. Year:
- 1997
- Page(from):
- 258
- Page(to):
- 267
- Pub. info.:
- Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819426444 [081942644X]
- Language:
- English
- Call no.:
- P63600/3212
- Type:
- Conference Proceedings
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