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1.3-ｦﾌm lnP-based n-type modulation-doped strained multiquantum well lasers for high-density parallel optical interconnections (Invited Paper)

Author(s):
Nakahara,K. ( Hitachi,Ltd. (Japan) )
Tsuchiya,T. ( Hitachi,Ltd. (Japan) )
Niwa,A. ( Hitachi,Ltd. (Japan) )
Uomi,K. ( Hitachi,Ltd. (Japan) )
Haga,T. ( Hitachi,Ltd. (Japan) )
Taniwatari,T. ( Hitachi,Ltd. (Japan) )
Toyonaka,T. ( Hitachi,Ltd. (Japan) )
2 more
Publication title:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3284
Pub. Year:
1998
Page(from):
164
Page(to):
171
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427236 [0819427233]
Language:
English
Call no.:
P63600/3284
Type:
Conference Proceedings

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