Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography

Author(s):

Steinhausler,T. ( Olin Microelectronic Materials,Inc. )

Gabor,A.H. ( Olin Microelectronic Materials,Inc. )

White,D. ( Olin Microelectronic Materials,Inc. )

Blakeney,A.J. ( Olin Microelectronic Materials,Inc. )

Stark,D.R. ( SEMATECH )

Miller,D.A. ( SEMATECH )

Rich,G.K. ( SEMATECH )

Graffenberg,V.L. ( SEMATECH )

Dean,K.R. ( SEMATECH )

4 more

Publication title:

Advances in resist technology and processing XV : 23-25 February 1998, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3333

Pub. Year:

1998

Vol.:

Part 1

Page(from):

122

Page(to):

131

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427786 [0819427780]

Language:

English

Call no.:

P63600/3333

Type:

Conference Proceedings

Details

TDL ID:	ZA00018317
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	1998 : 15th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.02.23-1998.02.25

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