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Deep levels in Hg1-x CdxTe using mobility and carrier concentration

Author(s):
  • Li,X. ( Shanghai Institute of Technical Physics (China) )
  • Hu,X. ( Shanghai Institute of Technical Physics (China) )
  • Lu,H. ( Shanghai Institute of Technical Physics (China) )
  • Zhao,J. ( Shanghai Institute of Technical Physics (China) )
  • Fang,J. ( Shanghai Institute of Technical Physics (China) )
Publication title:
Detectors, focal plane arrays, and imaging devices II : 18-19 September 1998, Beijing, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3553
Pub. Year:
1998
Page(from):
71
Page(to):
76
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430144 [0819430145]
Language:
English
Call no.:
P63600/3553
Type:
Conference Proceedings

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