DIRECT BAND - GAP Si - BASED SEMICONDUCTORS, PRINCIPLES AND PROSPECTS | 東京工業大学附属図書館文献データベース

DIRECT BAND - GAP Si - BASED SEMICONDUCTORS, PRINCIPLES AND PROSPECTS

Author(s):: Pearsall P.T.
Publication title:: Heterostructures on silicon : one step further with silicon
Title of ser.:: NATO ASI series. Series E, Applied sciences
Ser. no.:: 160
Pub. Year:: 1989
Page(from):: 137
Page(to):: 143
Pages:: 7
Pub. info.:: Dordrecht: Kluwer Academic Publishers
ISSN:: 0168132X
ISBN:: 9780792301240 [0792301242]
Language:: English
Call no.:: N11482/160
Type:: Conference Proceedings

Details

TDL ID:	ZA00018242
Series ID:	PA00000018
Conf. info. (Name):	NATO Advanced Research Workshop on Heterostructures on Silicon
Conf. info. (Number):	1988
Conf. info. (Venue):	Cargèse, Corsica, France
Conf. info. (Date):	1988.05.15-1988.05.20

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