UNSTRAINED VS. STRAINED LAYER EPITAXY: THICK Ge LAYERS AND Ge/Si SUPERLATTICES ON Si ( 100 )

UNSTRAINED VS. STRAINED LAYER EPITAXY: THICK Ge LAYERS AND Ge/Si SUPERLATTICES ON Si ( 100 )

Author(s):

Publication title:

Heterostructures on silicon : one step further with silicon

Title of ser.:

NATO ASI series. Series E, Applied sciences

Ser. no.:

160

Pub. Year:

1989

Page(from):

129

Page(to):

136

Pages:

8

Pub. info.:

Dordrecht: Kluwer Academic Publishers

ISSN:

0168132X

ISBN:

9780792301240 [0792301242]

Language:

English

Call no.:

N11482/160

Type:

Conference Proceedings

Details

TDL ID:	ZA00018242
Series ID:	PA00000018
Conf. info. (Name):	NATO Advanced Research Workshop on Heterostructures on Silicon
Conf. info. (Number):	1988
Conf. info. (Venue):	Cargèse, Corsica, France
Conf. info. (Date):	1988.05.15-1988.05.20

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