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Effect of developer temperature and normality on conventional and chemically amplified photoresist dissolution

Author(s):
Publication title:
Lithography for semiconductor manufacturing : 19-21 May 1999, Edinburgh, Scotland
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3741
Pub. Year:
1999
Page(from):
148
Page(to):
160
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819432216 [0819432210]
Language:
English
Call no.:
P63600/3741
Type:
Conference Proceedings

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