Impact of grain boundary character on electrical property in polycrystalline silicon

Impact of grain boundary character on electrical property in polycrystalline silicon

Author(s):

Publication title:

Interfacial engineering for optimized properties II : symposium held December 1-2, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

586

Pub. Year:

2000

Page(from):

163

Pub. info.:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994942 [1558994947]

Language:

English

Call no.:

M23500/586

Type:

Conference Proceedings

Details

TDL ID:	ZA00018051
Series ID:	PA00000011
Conf. info. (Name):	Interfacial Engineering for Optimized Properties : Symposium
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.12.01-1999.12.02

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