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Formation of gallium nitride (GaN) transition layer by plasma immersion ion implantation and rapid thermal annealing

Author(s):
Kwok, D. T. K.
Ho, A. H. P.
Zeng, X. C.
Chan, C.
Chu, P. K.
Wong, S. P.
1 more
Publication title:
Morphological and compositional evolution of heteroepitaxial semiconductor thin films : symposium held April 24-27, 2000, San Francisco, California
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
618
Pub. Year:
2000
Page(from):
309
Pub. info.:
Warrendale, Pennsylvania.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995260 [1558995269]
Language:
English
Call no.:
M23500/618
Type:
Conference Proceedings

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