Influence of growth temperature and phosphine flow on CuPt type ordering in InGaP grown by chemical beam epitaxy

Influence of growth temperature and phosphine flow on CuPt type ordering in InGaP grown by chemical beam epitaxy

Author(s):

Publication title:

Morphological and compositional evolution of heteroepitaxial semiconductor thin films : symposium held April 24-27, 2000, San Francisco, California

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

618

Pub. Year:

2000

Page(from):

259

Pub. info.:

Warrendale, Pennsylvania.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995260 [1558995269]

Language:

English

Call no.:

M23500/618

Type:

Conference Proceedings

Details

TDL ID:	ZA00018049
Series ID:	PA00000011
Conf. info. (Name):	Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films : Symposium
Conf. info. (Number):	2000
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.04.24-2000.04.27

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