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DEEP LEVELS INDUCED BY SiCl4 REACTIVE ION ETCHING IN GaAs

Author(s):
Publication title:
Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
325
Pub. Year:
1994
Page(from):
443
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992245 [1558992243]
Language:
English
Call no.:
M23500/325
Type:
Conference Proceedings

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