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Rh: A DOPANT WITH MID-GAP LEVELS IN InP AND InGaAs AND SUPERIOR THERMAL STABILITY

Author(s):
Scheffler, H.
Srocka, B.
Dadgar, A.
Kuttler, M.
Knecht, A.
Heitz, R.
Bimberg, D.
Hyeon, J. Y.
Schumann. H.
4 more
Publication title:
Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
325
Pub. Year:
1994
Page(from):
329
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992245 [1558992243]
Language:
English
Call no.:
M23500/325
Type:
Conference Proceedings

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