DEEP LEVEL STRUCTURE OF SEMI-INSULATING MOVPE GaAs GROWN BY CONTROLLED OXYGEN INCORPORATION
- Author(s):
- Publication title:
- Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 325
- Pub. Year:
- 1994
- Page(from):
- 305
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992245 [1558992243]
- Language:
- English
- Call no.:
- M23500/325
- Type:
- Conference Proceedings
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