ELECTRONIC CHARACTERIZATION OF DISLOCATIONS IN RTCVD GERMANIUM-SILICON/SILICON GROWN BY GRADED LAYER EPITAXY

ELECTRONIC CHARACTERIZATION OF DISLOCATIONS IN RTCVD GERMANIUM-SILICON/SILICON GROWN BY GRADED LAYER EPITAXY

Author(s):

Publication title:

Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

325

Pub. Year:

1994

Page(from):

159

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992245 [1558992243]

Language:

English

Call no.:

M23500/325

Type:

Conference Proceedings

Details

TDL ID:	ZA00018005
Series ID:	PA00000011
Conf. info. (Name):	Symposium on physics and applications of defects in advanced semiconductors
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.01

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