Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc From Silicon

Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc From Silicon

Author(s):

Publication title:

Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

532

Pub. Year:

1998

Page(from):

219

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994386 [1558994386]

Language:

English

Call no.:

M23500/532

Type:

Conference Proceedings

Details

TDL ID:	ZA00017999
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon front-end technology-materials processing and modelling
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.14

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