Investigation of the V4+ -Center In 6H- and 4H-SiC by the Method of Spectral-Hole Burning

Investigation of the V4+ -Center In 6H- and 4H-SiC by the Method of Spectral-Hole Burning

Author(s):

Publication title:

Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

512

Pub. Year:

1998

Page(from):

369

Pub. info.:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994188 [1558994181]

Language:

English

Call no.:

M23500/512

Type:

Conference Proceedings

Details

TDL ID:	ZA00017997
Series ID:	PA00000011
Conf. info. (Name):	Symposium on wide-bandgap semiconductors for high power, high frequency and high temperature
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.14

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