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Incorporation of Er Into GaN by In Situ Doping During Halide Vapor-Phase Epitaxy

Author(s):
Publication title:
Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
512
Pub. Year:
1998
Page(from):
327
Pub. info.:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994188 [1558994181]
Language:
English
Call no.:
M23500/512
Type:
Conference Proceedings

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