Bulk Breakdown in AlGaN/GaN HFETs
- Author(s):
Gradinaru, G. Kao, N. C. Gaska, R. Yang, J. Chen, Q. Khan, M. A. Sudarshan, T. S. - Publication title:
- Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 512
- Pub. Year:
- 1998
- Page(from):
- 309
- Pub. info.:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994188 [1558994181]
- Language:
- English
- Call no.:
- M23500/512
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
MRS - Materials Research Society |
2
Conference Proceedings
High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates
Materials Research Society |
8
Conference Proceedings
Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphire substrates
MRS-Materials Research Society |
3
Conference Proceedings
Stimulated Emission at 258 nm in AIN/AlGaN QuantumWells Grown on Bulk AIN Substrates
Materials Research Society |
9
Conference Proceedings
Negative differential conductivity in AlGaN/GaN HEMTs: Real space charge transfer from 2D to 3D GaN states?
MRS-Materials Research Society |
MRS-Materials Research Society |
MRS - Materials Research Society |
5
Conference Proceedings
The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN
Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
Materials Research Society |