Blank Cover Image

InGaN Laser Diodes Grown on SiC Substrates Using Low-Pressure Metalorganic Vapor-Phase Epitaxy

Author(s):
Kuramata, A.
Domen, K.
Soejima, R.
Horino, K.
Kubota, S.
Tanahashi, T.
1 more
Publication title:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
482
Pub. Year:
1998
Page(from):
1185
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
Language:
English
Call no.:
M23500/482
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Properties of GaN Epitaxial Layer Grown by MOVPE on MgAl2O4 Substrate

Kuramata, A., Horino, K., Domen, K., Soejima, R., Sudo, H., Tanahashi, T.

MRS - Materials Research Society
7 Conference Proceedings Surface and Interface Properties of InSb Epitaxial Thin Films Grown on GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition

Li, K., Tan, K. L., Pelczynski, M., Feng, Z. C., Wee, A. T. S., Lin, J. Y., Ferguson, I., Stall, R. A.

MRS - Materials Research Society
2 Conference Proceedings Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE

Horino, K., Kuramata, A., Tanahashi, T.

MRS - Materials Research Society
8 Conference Proceedings Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

Ishiguro, T., Kobori, Y., Nagawa, Y., Iwamura, Y., Yamaguchi, S.

Materials Research Society
3 Conference Proceedings The formation of In-rich regions at the periphery of the inverted hexagonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy

Li, P., Chua, S. J., Hao, M., Wang, W., Zhang, X., Sugahara, T., Sakai, S.

MRS-Materials Research Society
9 Conference Proceedings Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy

Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano

Society of Photo-optical Instrumentation Engineers
4 Conference Proceedings High-output-power near-ultraviolet and violet light-emitting diodes fabricated on patterned sapphire substrates using metalorganic vapor phase epitaxy

Tadatomo, K., Okagawa, H., Ohuchi, Y., Tsunekawa, T., Kudo, H., Sudo, Y., Kato, M., Taguchi, T.

SPIE - The International Society of Optical Engineering
10 Conference Proceedings Properties of InGaN/GaN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

Cheong, M.G., Kim, K.S., Kim, C.S., Choi, R.J., Yoon, H.S., Yu, S.W., Hong, Y.K., Hong, C.-H., Suh, E.-K., Lee, H.J.

Materials Research Society
5 Conference Proceedings Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy

Y. Fu, Q. Fan, S. Chevtchenko, U. Ozgur, H. Morkoc, Y. Ke, R. Devaty, W. J. Choyke, C. K. Inoki, T. S. Kuan

SPIE - The International Society of Optical Engineering
11 Conference Proceedings N-rich GaNAs With High As Content Grown by Metalorganic Vapor Phase Epitaxy

Kimura, Akitaka, Tang, H.F., Paulson, C.A., Kuech, T.R

Materials Research Society
6 Conference Proceedings Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates [6184-16]

Marona L., Wisniewski P., Prystawko P., Porowski S., Suski T., Leszczynsk M.i, Grzegory I., Czernecki R., PerlinP., …

SPIE - The International Society of Optical Engineering
12 Conference Proceedings Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition

Y. Fu, U. Ozgur, Q. Fan, N. Biyikli, S. Chevtchenko, H. Morkoc, Y. Ke, R. Devaty, W. J. Choyke, C. K. Inoki, T. S. Kuan

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12