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Luminescence Properties of Si-Doped GaN and Evidence of Compensating Defects as the Origin of the Yellow Luminescence

Author(s):
Publication title:
Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
482
Pub. Year:
1998
Page(from):
679
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993877 [1558993878]
Language:
English
Call no.:
M23500/482
Type:
Conference Proceedings

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