Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams

Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams

Author(s):

Publication title:

Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

482

Pub. Year:

1998

Page(from):

331

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993877 [1558993878]

Language:

English

Call no.:

M23500/482

Type:

Conference Proceedings

Details

TDL ID:	ZA00017994
Series ID:	PA00000011
Conf. info. (Name):	Symposium on nitride semiconductors
Conf. info. (Number):	1997
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.05

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