The Electrical Properties of In Situ Doped Polycrystalline Silicon Thin Films Grown by Electron-Cyclotron-Resonance Chemical Vapor Deposition at 250°C

The Electrical Properties of In Situ Doped Polycrystalline Silicon Thin Films Grown by Electron-Cyclotron-Resonance Chemical Vapor Deposition at 250°C

Author(s):

Publication title:

Polycrystalline thin films : structure, texture, properties and applications III : symposium held March 31-April 3, 1997, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

472

Pub. Year:

1997

Page(from):

451

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993761 [1558993762]

Language:

English

Call no.:

M23500/472

Type:

Conference Proceedings

Details

TDL ID:	ZA00017993
Series ID:	PA00000011
Conf. info. (Name):	Polycrystalline thin films-structure, texture, properties and applications
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Francisco, California, U.S.A.
Conf. info. (Date):	1997.03.31-1997.04.03

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