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The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV-Implanted Si

Author(s):
Publication title:
Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
439
Pub. Year:
1997
Page(from):
83
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993433 [1558993436]
Language:
English
Call no.:
M23500/439
Type:
Conference Proceedings

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