Valence-Band Offset at the Zn-P Interface Between ZnSe and III-V Wide Gap Semiconductor Alloys: A First-Principles Investigation
- Author(s):
- Publication title:
- Materials theory, simulations, and parallel algorithms : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 408
- Pub. Year:
- 1996
- Page(from):
- 539
- Pub. info.:
- Pittsburgh, Pennsylvania: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993112 [1558993118]
- Language:
- English
- Call no.:
- M23500/408
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
7
Conference Proceedings
CONDUCTION AND VALENCE BAND OFFSETS AT THE HYDROGENATED AMORPHOUS SILICON-CARBON/CRYSTALLINE SILICON INTERFACE VIA CAPACITANCE TECHNIQUES
Materials Research Society |
Materials Research Society |
Materials Research Society |
3
Conference Proceedings
Study of Electrical Transport Across Interfaces Between Wide-Gap Semiconductor and Metal Oxides
MRS - Materials Research Society |
Kluwer Academic Publishers |
Trans Tech Publications |
10
Conference Proceedings
LOCAL INTERFACE COMPOSITION AND BAND OFFSET TUNING IN ZnSe-GaAs(001) HETEROSTRUCTURES
MRS - Materials Research Society |
5
Conference Proceedings
Electrochromic Devices Based on Wide Band-Gap Nanocrystalline Semiconductors Functionalized with Polynuclear Mixed Valence Compounds
Society of Vacuum Coaters |
Plenum Press |
SPIE-The International Society for Optical Engineering |
Plenum Press |