Effects of Laser Irradiation on Growth and Doping Characteristics of GaAs in Chemical Beam Epitaxy

Effects of Laser Irradiation on Growth and Doping Characteristics of GaAs in Chemical Beam Epitaxy

Author(s):

Publication title:

Film synthesis and growth using energetic beams : symposium held April 17-20, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

388

Pub. Year:

1995

Page(from):

373

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992917 [155899291X]

Language:

English

Call no.:

M23500/388

Type:

Conference Proceedings

Details

TDL ID:	ZA00017985
Series ID:	PA00000011
Conf. info. (Name):	Symposium on film synthesis and growth using energetic beams
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.20

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