Anion Exchange Reactions and Initial GaN Epitaxial Layer Formation Under Nitrogen Plasma Exposure of a GaAs Surface

Anion Exchange Reactions and Initial GaN Epitaxial Layer Formation Under Nitrogen Plasma Exposure of a GaAs Surface

Author(s):

Publication title:

Film synthesis and growth using energetic beams : symposium held April 17-20, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

388

Pub. Year:

1995

Page(from):

259

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992917 [155899291X]

Language:

English

Call no.:

M23500/388

Type:

Conference Proceedings

Details

TDL ID:	ZA00017985
Series ID:	PA00000011
Conf. info. (Name):	Symposium on film synthesis and growth using energetic beams
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.20

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