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SILICON NUCLEATION ON SILICON DIOXIDE AND SELECTIVE EPITAXY IN AN ULTRA-HIGH VACUUM RAPID THERMAL CHEMICAL VAPOR DEPOSITION REACTOR USING DISILANE IN HYDROGEN

Author(s):
Publication title:
Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
334
Pub. Year:
1994
Page(from):
519
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992337 [1558992332]
Language:
English
Call no.:
M23500/334
Type:
Conference Proceedings

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