Vertical Transport and Current Instabilities in i-GaAs-i-AlAs-n-GaAs Heterostructure Hot Electron Diode at Auger Ionization

Vertical Transport and Current Instabilities in i-GaAs-i-AlAs-n-GaAs Heterostructure Hot Electron Diode at Auger Ionization

Author(s):

Publication title:

Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September, 1998

Title of ser.:

Materials science forum

Ser. no.:

297-298

Pub. Year:

1999

Page(from):

345

Page(to):

348

Pub. info.:

Zurich-Uetikon, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498246 [0878498249]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00017907
Series ID:	PA00000012
Conf. info. (Name):	International Symposium on Ultrafast Phenomena in Semiconductors : UFPS
Conf. info. (Number):	10th
Conf. info. (Venue):	Vilnius, Lithuania
Conf. info. (Date):	1998.08.00-1998.09.00

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