The Removal Kinetics of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects

The Removal Kinetics of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects

Author(s):

Publication title:

Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988

Title of ser.:

Materials science forum

Ser. no.:

38-41

Pub. Year:

1989

Vol.:

Part3

Page(from):

1239

Page(to):

1244

Pub. info.:

Aederlmannsdorf, Switzwelns: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495849 [0878495843]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00017895
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconduotors : ICDS
Conf. info. (Number):	15th
Conf. info. (Venue):	Budapest, Hungary
Conf. info. (Date):	1988.08.22-1988.08.26

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