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Formation of Defects in Ion Implanted Silicon during Rapid lsothermal Annealing

Author(s):
Publication title:
Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988
Title of ser.:
Materials science forum
Ser. no.:
38-41
Pub. Year:
1989
Vol.:
Part3
Page(from):
1187
Page(to):
1192
Pub. info.:
Aederlmannsdorf, Switzwelns: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495849 [0878495843]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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